VS-60APH03-N3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 60 A FRED Pt

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VS-60APH03-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
28
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
t_rr
T_J = 25 °C
-
34
-
42
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
64
I_F = 60 A
-
3.0
dI_F/dt = 200 A/μs
V_R = 200 V
-
8.5
-
65
-
273
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and greased
Approximate Weight
Mounting torque
Marking device
Case style TO-247AC
MIN.
-55
-
-
-
-
-
6.0
(12)
TYP.
-
MAX.
175
0.56
0.80
-
40
0.4
-
6.0
-
0.22
-
-
12
-
(10)
60APH03
UNITS
°C
°C/W
g
oz.
kgf. cm
(lbf.in)
1000
100
T_J = 175 °C
10
T_J = 125 °C
T_J = 25 °C
1
0.3
0.6
0.9
1.2
1.5
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
0.1
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
0.01
25 °C
0.001
50
100
150
200
250
300
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current
vs. Reverse Voltage
Revision: 10-Jul-15
2
Document Number: 94796
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