VS-5EWH06FNHM3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Hyperfast Rectifier, 5 A FRED Pt

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VS-5EWH06FNHM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
18
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
22
t_rr
T_J = 25 °C
-
25
T_J = 125 °C
-
35
I_RRM
T_J = 25 °C
I_F = 5 A
-
dI_F/dt = 200 A/μs
3.9
T_J = 125 °C
V_R = 390 V
-
5.1
T_J = 25 °C
Q_rr
T_J = 125 °C
-
51
-
93
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
T_J, T_Stg
R_thJC
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
MIN.
-65
-
TYP.
-
MAX.
175
-
3
0.3
0.01
5EWH06FNH
UNITS
°C
°C/W
g
oz.
100
10
T_J = 175 °C
1
T_J = 125 °C
T_J = 25 °C
0.1
0
0.5 1.0 1.5 2.0 2.5 3.0
93245_01
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10
T_J = 175 °C
T_J = 150 °C
1
T_J = 125 °C
0.1
T_J = 100 °C
0.01
0.001
0
T_J = 75 °C
T_J = 50 °C
T_J = 25 °C
100 200 300 400 500 600
93245_02
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 10-Jul-15
2
Document Number: 94817
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