VS-5ECH06-M3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Hyperfast Rectifier, 5 A FRED Pt

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VS-5ECH06-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
30
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
35
t_rr
I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 A
-
-
T_J = 25 °C
-
23
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
38
I_F = 5 A
-
3.5
dI_F/dt = 200 A/μs
V_R = 390 V
-
5.4
-
41
-
111
MAX.
-
-
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
T_J, T_Stg
R_thJC ⁽¹⁾
R_thJA ⁽¹⁾
Approximate Weight
Marking device
Note
(1) _{Mounted on PCB with minimum pad size}
Case style DO-214AB (SMC)
MIN.
-55
-
-
TYP.
-
MAX.
175
-
14
-
80
0.24
0.008
5H6
UNITS
°C
°C/W
g
oz.
100
10 _{TJ = 175 °C}
1
T_J = 150 °C
T_J = 25 °C
0.1
0.0 0.5 1.0 1.5
2.0 2.5 3.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
175 °C
150 °C
1
0.1
25 °C
0.01
0.001
0.0001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current
vs. Reverse Voltage
Revision: 04-Nov-16
2
Document Number: 94779
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