VS-50WQ10FNPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier

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VS-50WQ10FNPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM ⁽¹⁾
V_F(TO)
r_t
C_T
L_S
5A
10 A
5A
10 A
T_J = 25 °C
T_J = 125 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
T_J =T_J maximum
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
VALUES
0.77
0.91
0.63
0.74
1
4
0.47
21.46
183
5.0
UNITS
V
mA
V
m
pF
nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage 
temperature range
Maximum thermal resistance,
junction to case
T_J ⁽¹⁾, T_Stg
R_thJC
DC operation
See fig. 4
TEST CONDITIONS

Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
VALUES UNITS
- 40 to 150 °C
3.0
°C/W
0.3
g
0.01
oz.
50WQ10FN
Revision: 29-May-13
2
Document Number: 94235
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