VS-50WQ06FNPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 5.5 A

VS-50WQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
I_RM ⁽¹⁾
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
V_F(TO)
r_t
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
5A
10 A
5A
10 A
T_J = 25 °C
T_J = 125 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
T_J = T_J maximum
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.57
0.74
0.54
0.68
3
35
0.35
25.5
360
5.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
T_J ⁽¹⁾, T_Stg
R_thJC
DC operation
See fig. 4
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
VALUES
- 40 to 150
UNITS
°C
3.0
°C/W
0.3
g
0.01
oz.
50WQ06FN
www.vishay.com
2
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Revision: 14-Jan-11