VS-31DQ05 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Schottky Rectifier, 3.3 A

VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 4
I_RM ⁽¹⁾
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
3A
T_J = 25 °C
6A
3A
T_J = 125 °C
6A
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.62
0.78
0.54
0.65
2
15
160
9.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J ⁽¹⁾, T_Stg
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
R_thJA
R_thJL
DC operation
Without cooling fin
DC operation
Approximate weight
Marking device
Case style C-16
Note
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
VALUES
- 40 to 150
UNITS
°C
80
°C/W
15
1.2
g
0.042
oz.
31DQ05
31DQ06
Revision: 19-Sep-11
2
Document Number: 93320
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