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VS-2EJH01HM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier | |||
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www.vishay.com
VS-2EJH01HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
25
Reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
TJ = 25 °C
-
-
-
17
TJ = 125 °C
-
24
Peak recovery current
IRRM
TJ = 25 °C
IF = 2 Aï
-
2
dIF/dt = 200 A/μsï
TJ = 125 °C
VR = 160 V
-
3
Reverse recovery charge
TJ = 25 °C
Qrr
TJ = 125 °C
-
17
-
37
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,ï
junction to case
Thermal resistance,ï
junction to ambient
TJ, TStg
RthJC
RthJA
Device mounted on PCB withï
8 mm x 16 mm soldering lands
Device mounted on PCB withï
2 mm x 3.5 mm soldering lands
Approximate weight
Marking device
Case style SlimSMA (DO-221AC)
MIN.
-65
-
-
TYP.
-
MAX.
175
-
12
-
115
0.03
0.0011
2H1
UNITS
°C
°C/W
g
oz.
100
10 TJ = 175 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
175 °C
10
1
150 °C
125 °C
0.1
0.01
0.001
25 °C
0.0001
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current
vs. Reverse Voltage
Revision: 20-Nov-14
2
Document Number: 94902
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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