VS-20ETS08SPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – High Voltage Surface Mount Input Rectifier Diode, 20 A

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VS-20ETS08SPbF, VS-20ETS12SPbF
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle 
non-repetitive surge current
Maximum I²t for fusing
Maximum I²ïƒ–t for fusing
SYMBOL
I_F(AV)
I_FSM
I²t
I²ïƒ–t
TEST CONDITIONS
T_C = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
UNITS
A
A²s
A²ïƒ–s
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V_FM
r_t
V_F(TO)
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Maximum thermal resistance, 
junction to case
Maximum thermal resistance, 
junction to ambient
Typical thermal resistance, 
case to heatsink
T_J, T_Stg
R_thJC
R_thJA ⁽¹⁾
R_thCS
DC operation
For D²PAK version
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-263AB (D²PAK)
Note
(1) _{When mounted on 1” square (650 mm}2_{) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/Wï€} 
For recommended footprint and soldering techniques refer to application note #AN-994
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
VALUES
- 40 to 150
1.3
UNITS
°C
62
°C/W
0.5
2
g
0.07
oz.
6.0 (5.0)
12 (10)
kgf · cm
(lbf · in)
20ETS08S
20ETS12S
Revision: 12-Feb-16
2
Document Number: 94340
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000