VS-175BGQ030HF4 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Screw mounting only

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VS-175BGQ030HF4
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
V_FM ⁽¹⁾
Reverse leakage current
I_RM ⁽¹⁾
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
100 A
175 A
T_J = 25 °C
100 A
175 A
T_J = 150 °C
T_J = 125 °C, V_R = 15 V
T_J = 150 °C, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured from tab to mounting plane
Rated V_R
TYP. MAX.
0.47
0.49
0.55
0.59
0.36
0.39
0.47
0.52
160
220
1400 2000
1.3
4.5
450
650
8500
3.5
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance, 
junction to case
Typical thermal resistance, 
case to heatsink
T_J, T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style PowerTab^®
VALUES
-55 to +150
UNITS
°C
0.35
°C/W
0.20
5
g
0.18
oz.
1.2 (10)
2.4 (20)
N·m
(lbf · in)
175BGQ030H
1000
100
T_J = 150 °C
10
T_J = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
1000
100
10
1
0.1
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0
5
10
15 20 25 30
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 16-Jun-15
2
Document Number: 93804
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