VEMT2000X01 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Silicon NPN Phototransistor

VEMT2000X01, VEMT2020X01
Vishay Semiconductors ^{Silicon NPN Phototransistor}
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Acc. reflow profile fig. 8
Acc. J-STD-051
T_stg
T_sd
R_thJA
VALUE
- 40 to + 100
260
250
UNIT
°C
°C
K/W
120
100
80
60
R_thJA = 250 K/W
40
20
0
0 10 20 30 40 50 60 70 80 90 100
21619
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
I_C = 0.1 mA
V_CEO
20
Collector dark current
V_CE = 5 V, E = 0
I_CEO
Collector emitter capacitance
V_CE = 0 V, f = 1 MHz, E = 0
C_CEO
Collector light current
E_e = 1 mW/cm²,  = 950 nm,
V_CE = 5 V
I_ca
3
Angle of half sensitivity

Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Temperature coefficient of I_ca
I_C = 0.05 mA
E_e = 1 mW/cm²,  = 950 nm,
V_CE = 5 V
_p
_0.5
V_CEsat
Tk_Ica
TYP.
1
25
6
± 15
860
790 to 970
1.1
MAX.
100
9
0.4
UNIT
V
nA
pF
mA
deg
nm
nm
V
%/K
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2
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Document Number: 81595
Rev. 1.2, 21-Feb-11