VEMD2003X01 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Silicon PIN Photodiode

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VEMD2003X01, VEMD2023X01
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
I_F = 50 mA
V_F
Breakdown voltage
I_R = 100 μA, E = 0
V_(BR)
32
Reverse dark current
V_R = 10 V, E = 0
I_ro
Diode capacitance
V_R = 0 V, f = 1 MHz, E = 0
C_D
V_R = 5 V, f = 1 MHz, E = 0
C_D
Open circuit voltage
E_e = 1 mW/cm²,  = 950 nm
V_o
Temperature coefficient of V_o
E_e = 1 mW/cm²,  = 950 nm
TK_Vo
Short circuit current
E_e = 1 mW/cm²,  = 950 nm
I_k
Temperature coefficient of I_k
E_e = 1 mW/cm²,  = 950 nm
TK_Ik
Reverse light current
E_e = 1 mW/cm²,  = 950 nm, V_R = 5 V
I_ra
7
Angle of half sensitivity

Wavelength of peak sensitivity
_p
Range of spectral bandwidth
_0.5
Rise time
V_R = 10 V, R_L = 1 k,  = 820 nm
t_r
Fall time
V_R = 10 V, R_L = 1 k,  = 820 nm
t_f
TYP.
1
1
4
1.3
350
- 2.6
10
0.1
10
± 35
940
750 to 1050
100
100
MAX.
10
14
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
ns
ns
1000
100
100
V_R = 5 V
10
10
V_R = 10 V
1
20
40
60
80
100
94 8427 T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1
0.1
0.01
0.1
1
10
E_e - Irradiance (mW/cm²)
Fig. 3 - Reverse Light Current vs. Irradiance
1.4
1.2
V =5V
R
λ = 950 nm
1.0
8
6
E=0
f = 1 MHz
4
0.8
2
0.6
0
94 8416
20
40
60
80
100
T - Ambient Temperature (°C)
amb
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
0
0.1
1
10
100
94 8430
V_R- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.0, 04-Apr-13
2
Document Number: 84147
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