VBT6045CBP_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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VBT6045CBP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 10 A
I_F = 15 A
I_F = 30 A
I_F = 10 A
I_F = 15 A
I_F = 30 A
Reverse current per diode
V_R = 45 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.44
0.47
0.54
0.33
0.37
0.47
-
18
MAX.
-
-
0.64
-
-
0.56
3000
50
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
R_JC
VBT6045CBP
1.5
0.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VBT6045CBP-E3/4W
1.38
TO-263AB
VBT6045CBP-E3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
65
60
55
50
45
40
35
30
25
20
15
10 DC Forward Current at
5 Thermal Equilibrium
0
100
120
140
160
180
200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
D = 0.5
D = 0.3
D = 0.8
16
14
D = 0.2
12
10
D = 0.1
8
6
D = 1.0
T
4
2
D = t_p/T
t_p
0
0
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 22-May12
2
Document Number: 89374
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