VBT4060C-M3_15 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

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VBT4060C-M3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
R_JC
VBT4060C
1.5
0.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VBT4060C-M3/4W
1.39
TO-263AB
VBT4060C-M3/8W
1.39
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
14
D = 0.5 _{D = 0.8}
12
D = 0.3
10
D = 0.2
8
6 ^{D = 0.1}
4
D = 1.0
T
2
D = t_p/T
t_p
0
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
1000
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
0.1
0.01
T_A = 25 °C
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 21-May-13
2
Document Number: 87973
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