VBT3045C-M3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com
VBT3045C-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
I_F = 5 A
I_F = 7.5 A
I_F = 15 A
I_F = 5 A
I_F = 7.5 A
I_F = 15 A
V_R = 45 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.42
0.44
0.49
0.30
0.33
0.39
-
17
MAX.
-
-
0.57
-
-
0.48
2000
50
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
R_JC
VBT3045C
1.6
0.85
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VBT3045C-M3/4W
1.38
TO-263AB
VBT3045C-M3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
0
100
110
120
130
140
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
9
8
D = 0.5 _{D = 0.8}
D = 0.3
7
6
D = 0.2
5
4 ^{D = 0.1}
3
D = 1.0
T
2
1
D = t_p/T
t_p
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 30-Apr-13
2
Document Number: 87957
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000