VBT2045CBP Datasheet, PDF (2/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

VBT2045CBP
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current per diode
V_R = 45 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.44
0.49
0.33
0.41
-
10
MAX.
-
0.58
-
0.52
2000
30
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
R_θJC
VBT2045CBP
3.0
2.0
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VBT2045CBP-E3/4W
1.38
TO-263AB
VBT2045CBP-E3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
24
20
16
12
8
4
0
100
110
120
130
140
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
6
5
D = 0.5
D = 0.3
4
D = 0.2
3
D = 0.1
2
D = 0.8
D = 1.0
T
1
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 89372
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Revision: 27-Oct-10