VBT1080C-M3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Trench MOS Schottky technology

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VBT1080C-M3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
R_JC
VBT1080C
3.5
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VBT1080C-M3/4W
1.35
TO-263AB
VBT1080C-M3/8W
1.35
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.0
D = 0.8
3.5
D = 0.5
3.0
D = 0.3
D = 0.2
2.5
D = 0.1
D = 1.0
2.0
1.5
T
1.0
0.5
D = t_p/T
t_p
0
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
T_A = 150 °C
10 ^TA ^{= 125 °C}
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 14-May-13
2
Document Number: 87974
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