VBT1045BP_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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VBT1045BP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
V_R = 45 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
TYP.
0.50
0.57
0.41
0.52
-
5
MAX.
-
0.68
-
0.64
500
15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
R_JC
VBT1045BP
3.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VBT1045BP-E3/4W
1.37
TO-263AB
VBT1045BP-E3/8W
1.37
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
10
8
6
4
2 ^{DC Forward Current at}
Thermal Equilibrium
0
0 25 50 75 100 125 150 175 200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-12
2
Document Number: 89452
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