VB40M120C-E3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Trench MOS Schottky technology

VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 10 A
I_F = 20 A
I_F = 5 A
I_F = 10 A
I_F = 20 A
Reverse current per diode
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  20 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.54
0.64
0.79
0.46
0.54
0.64
4
3
-
6
MAX.
-
-
0.89
-
-
0.72
-
-
500
32
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_JC
VB40M120C
1.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VB40M120C-E3/4W
1.39
TO-263AB
VB40M120C-E3/8W
1.39
TO-263AB
TO-263AB
VB40M120C-M3/I
VB40M120CHM3/I ⁽¹⁾
1.39
1.39
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE
4W
8W
I
I
BASE QUANTITY
50/tube
800/reel
800/reel
800/reel
DELIVERY MODE
Tube
Tape and reel
Tape and reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
30
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
18.0
16.0
D = 0.5 ^{D = 0.8}
D = 0.3
14.0
D = 0.2
12.0
D = 0.1
D = 1.0
10.0
8.0
T
6.0
4.0
2.0
D = t_p/T
t_p
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 03-Jan-17
2
Document Number: 89468
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