V8PL6-M3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V8PL6-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
I_F = 4.0 A
I_F = 8.0 A
I_F = 4.0 A
I_F = 8.0 A
Reverse current
V_R = 60 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.43
0.50
0.34
0.42
-
21
MAX.
-
0.58
-
0.52
2.4
55
UNIT
V
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8PL6-M3
Typical thermal resistance
R_JA ^{(1) (2)}
75
R_JM ⁽³⁾
4
Notes
(1) _{Free air, mounted on recommended copper pad area; thermal resistance RJA - junction-to-ambient}
(2) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(3) _{Mounted on 30 mm x 30 mm Al PCB; thermal resistance RJM - junction-to-mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V8PL6-M3/86A
0.10
86A
V8PL6-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
9
TM = 132 ^oC, RthJM = 4 ^oC/W
8
7
6
5 _{TA = 25 oC, RthJA = 75 oC/W}
4
3
2
1
0
0
25
50
75 100 125 150
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
5
D = 0.8
D = 0.5
4
D = 0.3
D = 0.2
3
D = 0.1
D = 1.0
2
T
1
D = t_p/T
t_p
0
0123456789
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 27-Oct-14
2
Document Number: 87725
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