V80100PW_15 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V80100PW
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode
I_R = 1.0 mA
I_F = 10 A
I_F = 20 A
I_F = 40 A
I_F = 10 A
I_F = 20 A
I_F = 40 A
Reverse current per diode
V_R = 80 V
V_R = 100 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 25 °C
T_J = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
100 (minimum)
0.49
0.59
0.76
0.43
0.55
0.64
38
17
85
33
MAX.
-
-
-
0.84
-
-
0.76
-
-
1000
76
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
R_JC
V80100PW
1.5
0.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-3PW
V80100PW-M3/4W
4.5
PACKAGE CODE
4W
BASE QUANTITY
30/tube


RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
80
Resistive or Inductive Load
60
50
40
20
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
36
D = 0.8
32
D = 0.5
D = 0.3
28
24
20
D = 0.2
16
12 ^{D = 0.1}
D = 1.0
T
8
4
D = t_p/T t_p
0
0 4 8 12 16 20 24 28 32 36 40 44 48
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 20-Dec-13
2
Document Number: 89183
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