V60DM120C-M3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Schottky technology

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V60DM120C-M3, V60DM120CHM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current at rated V_R per diode
I_F = 5 A
I_F = 15 A
I_F = 30 A
I_F = 5 A
I_F = 15 A
I_F = 30 A
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.51
0.68
0.87
0.43
0.58
0.69
0.01
5
-
10
MAX.
-
-
0.97
-
-
0.77
-
-
0.7
35
UNIT
V
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60DM120C
Typical thermal resistance
per device
per device
R_JC
R_JA ⁽¹⁾⁽²⁾
0.95
45
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT
(g)
V60DM120C-M3/I
0.55
V60DM120CHM3/I ⁽¹⁾
0.55
PACKAGE CODE
I
I
Note
(1) _{AEC-Q101 qualified}
BASE QUANTITY
2000/reel
2000/reel
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
65
60
55
R_{th JC} = 0.95 °C/W
50
45
40
35
30
25
20
15
10
Rth_JA = 45 °C/W
5
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
30
D = 0.8
25
D = 0.5
20
D = 1.0
D = 0.3
15
D = 0.2
10
D = 0.1
T
5
D = t_p/T
t_p
0
0
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 22-Apr-15
2
Document Number: 87618
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