V60D120C-M3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60D120C-M3, V60D120CHM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current at rated V_R per diode
I_F = 5 A
I_F = 15 A
I_F = 30 A
I_F = 5 A
I_F = 15 A
I_F = 30 A
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.48
0.68
0.91
0.39
0.59
0.70
14
11
-
27
MAX.
-
-
0.96
-
-
0.76
-
-
800
75
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60D120C
per diode
1.8
Typical thermal resistance
per device
R_JC
0.95
per device
R_JA ⁽¹⁾⁽²⁾
45
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
TO-263AC (SMPD) V60D120C-M3/I
0.55
TO-263AC (SMPD) V60D120CHM3/I ⁽¹⁾
0.55
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
60
50
40
30
20
10
0
0
R_thJC = 0.95 °C/W
R_thJA = 45 °C/W
25
50
75 100 125 150
Case Temperature (°C)
28
24
20
16
12
8
4
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.8
D = 1.0
D = 0.1
T
D = t_p/T t_p
5
10 15 20 25 30 35
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 06-Feb-15
2
Document Number: 87953
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