V60D100C-M3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60D100C-M3, V60D100CHM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current at rated V_R per diode
I_F = 5 A
I_F = 15 A
I_F = 30 A
I_F = 5 A
I_F = 15 A
I_F = 30 A
V_R = 70 V
V_R = 100 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
TYP.
0.45
0.62
0.75
0.36
0.54
0.66
12
11
-
27
MAX.
-
-
0.81
-
-
0.73
-
-
1000
85
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60D100C
Typical thermal resistance
per diode
per device
per device
per device
R_JC
R_JC
R_JM ⁽²⁾
R_{JA(1)(2)}
1.8
0.95
3
45
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink; thermal resistance RJA - junction to ambient; thermal resistance RJM - junction to mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
TO-263AC (SMPD) V60D100C-M3/I
0.55
TO-263AC (SMPD) V60D100CHM3/I ⁽¹⁾
0.55
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
Revision: 28-Mar-15
2
Document Number: 87952
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