V60100P Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A

V60100P
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
I_R = 1.0 mA T_J = 25 °C
V_BR
100 (minimum)
I_F = 10 A
I_F = 15 A
T_J = 25 °C
Instantaneous forward voltage per diode ^{(1) IF = 30 A}
V_F
I_F = 10 A
I_F = 15 A
T_J = 125 °C
I_F = 30 A
0.518
0.576
0.730
0.456
0.531
0.657
Reverse current per diode ⁽²⁾
V_R = 80 V
T_J = 25 °C
T_J = 125 °C
I_R
V_R = 100 V
T_J = 25 °C
T_J = 125 °C
34.6
9.5
82.0
19.2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
-
0.79
-
-
0.70
-
-
800
45
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_θJC
V60100P
1.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V60100P-E3/45
6.12
45
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
70
Resistive or Inductive Load
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
25
D = 0.8
20
D = 0.5
D = 0.3
15
D = 0.2
D = 1.0
D = 0.1
10
T
5
D = t_p/T
t_p
0
0
5
10 15 20 25 30 35
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88978
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Revision: 26-May-08