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V30D202C_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V30D202C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
TA = 25 °C
Instantaneous forward voltage per diode
IF = 15 A
IF = 5 A
IF = 10 A
TA = 125 °C
VF (1)
IF = 15 A
Reverse current at rated VR per diode
TA = 25 °C
VR = 160 V
TA = 125 °C
IR (2)
TA = 25 °C
VR = 200 V
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
TYP.
0.72
0.78
0.8
0.56
0.64
0.66
1
2
-
5
MAX.
-
-
0.88
-
-
0.73
-
-
200
50
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30D202C
UNIT
Typical thermal resistance
per diode
per device
RJC
2.0
1.1
°C/W
per device
RJA (1)(2)
50
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA - junction-to -mount
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
TO-263AC (SMPD) V30D202C-M3/I
0.55
TO-263AC (SMPD) V30D202CHM3/I (1)
0.55
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
30 RthJC = 1.1 °C/W
25
20
15
10
RthJA = 50 °C/W
5
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
D = 0.8
D = 0.5
D = 0.3
D = 1.0
D = 0.2
D = 0.1
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 10-Feb-15
2
Document Number: 87748
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