V20WL45-M3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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V20WL45-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
I_F = 5 A
I_F = 10 A
I_F = 20 A
I_F = 5 A
I_F = 10 A
I_F = 20 A
V_R = 45 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.41
0.46
0.53
0.30
0.37
0.48
-
24
MAX.
-
-
0.62
-
-
0.59
4000
53
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20WL45
Typical thermal resistance
R_JC
1.6
R_JA ⁽¹⁾⁽²⁾
65
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V20WL45-M3/I
0.38
PACKAGE CODE
I
BASE QUANTITY
2500/reel
DELIVERY MODE
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
22
20
Rth_JA=Rth_JC=1.6^oC/W
18
16
14
12
10
8
6
Rth_JA=65^oC/W
4
2
0
0
25
50
75 100 125 150
Case Temperature (°C)
14
12
10
8
6
4
2
0
0
D = 0.3
D = 0.2
D = 0.1
D = 0.5
D = 0.8
D = 1.0
T
D = t_p/T
t_p
4
8
12
16
20
24
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 04-Dec-13
2
Document Number: 89977
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