V20PW60C Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V20PW60C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
Typical junction capacitance per diode
I_F = 5.0 A
I_F = 10 A
I_F = 5.0 A
I_F = 10 A
V_R = 60 V
4.0 V, 1 MHz
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
C_J
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: pulse width ≤ 5 ms}
TYP.
0.48
0.56
0.40
0.51
-
10
1140
MAX.
-
0.64
-
0.59
1.5
30
-
UNIT
V
mA
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20PW60C
Typical thermal resistance
R_θJA ⁽¹⁾⁽²⁾
55
R_θJM ⁽³⁾
1.8
Notes
(1) _{The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA}
(2) _{Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient}
(3) _{Mounted on infinite heat sink; thermal resistance RθJM - junction-to-mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V20PW60C-M3/I
0.20
I
V20PW60CHM3/I ⁽¹⁾
0.20
I
Note
(1) _{AEC-Q101 qualified}
BASE QUANTITY
4500
4500
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 01-Jun-17
2
Document Number: 87674
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