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V20PW15C Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V20PW15C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
Typical junction capacitance per diode
IF = 5.0 A
IF = 10 A
IF = 5.0 A
IF = 10 A
VR = 100 V
VR = 150 V
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 5 ms
TYP.
0.81
1.16
0.61
0.69
0.01
1.5
-
3
560
MAX.
-
1.24
-
0.75
-
-
0.15
10
-
UNIT
V
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20PW15C
Typical thermal resistance
RθJA (1)(2)
55
RθJM (3)
1.8
Notes
(1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
(2) Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient
(3) Mounted on infinite heat sink; thermal resistance RθJM - junction-to-mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V20PW15C-M3/I
0.20
I
V20PW15CHM3/I (1)
0.20
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
4500
4500
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 01-Jun-17
2
Document Number: 87684
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000