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V20PL50-M3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V20PL50-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
IF = 5.0 A
IF = 10 A
IF = 20 A
IF = 5.0 A
IF = 10 A
IF = 20 A
VR = 40 V
VR = 50 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.40
0.45
0.51
0.29
0.36
0.46
0.02
15
-
20
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 5 ms
MAX.
-
-
0.59
-
-
0.54
-
-
3
60
UNIT
V
mA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20PL50
Typical thermal resistance
RθJA (1)(2)
68
RθJM (3)
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
(3) Mounted on 30 mm x 30 mm 2 oz. pad PCB; thermal resistance RθJM - junction to mount measured at cathode side
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V20PL50-M3/86A
0.10
86A
V20PL50-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
TM = 114 °C, RthJM = 4 °C/W
20
15
10
TA = 25 °C, RthJA = 68 °C/W
5
0
0
25
50
75 100 125 150
Case Temperature (°C) (D = duty cycle = 0.5)
Fig. 1 - Maximum Forward Current Derating Curve
14
13
D = 0.8
12
D = 0.5
11
D = 0.3
10
9
D = 1.0
8
7
D = 0.2
6
5
4 D = 0.1
3
2
1
0
0
5
10
15
20
25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 15-May-14
2
Document Number: 87706
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