V20M120M-E3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Low forward voltage drop, low power losses

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V20M120M-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
V_R = 100 V
V_R = 120 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
TYP.
0.70
0.93
0.58
0.68
2.0
1.5
-
2.0
MAX.
-
1.01
-
0.76
-
-
500
12
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20M120M
per diode
2.8
Typical thermal resistance
per device
R_JC
1.4
per device
R_JA ⁽¹⁾⁽²⁾
40
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20M120M-E3/4W
1.88
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
22
20
18
16
14
12
10
8
6
4
2
0
0
R_thJA = R_thJC = 1.4 °C/W
T_A, R_thJA = 40 °C/W
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
9
D = 0.8
D = 0.5
8
D = 0.3
7
D = 0.2
6
D = 0.1
5
D = 1.0
4
3
T
2
1
D = t_p/T
t_p
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-May-16
2
Document Number: 89987
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