V20DL45-M3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Low-Voltage Trench MOS Barrier Schottky Rectifier

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V20DL45-M3, V20DL45HM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
I_F = 5 A
I_F = 10 A
I_F = 20 A
I_F = 5 A
I_F = 10 A
I_F = 20 A
V_R = 45 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: pulse width  5 ms}
TYP.
0.42
0.48
0.55
0.31
0.38
0.50
-
20
MAX.
-
-
0.64
-
-
0.58
2.5
50
UNIT
V
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20DL45-M3, V20DL45HM3
Typical thermal resistance
R_JC
1.6
R_JA ⁽¹⁾⁽²⁾
45
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V20DL45-M3/I
0.54
I
V20DL45HM3/I ⁽¹⁾
0.54
I
V20DL45HM3_A/I ⁽¹⁾
0.54
I
Note
(1) _{AEC-Q101 qualified}
BASE QUANTITY
2000/reel
2000/reel
2000/reel
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
24
20
Rth_JA=Rth_JC=1.6^oC/W
16
12
Rth_JA=45^oC/W
8
4
0
0
25
50
75 100 125 150
Case Temperature (°C)
14
12
10
8
6
4
2
0
0
D = 0.5
D = 0.3
D = 0.8
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T t_p
4
8
12
16
20
24
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 05-May-15
2
Document Number: 87786
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