V20202C_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V20202C, VF20202C, VB20202C, VI20202C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode ⁽¹⁾
Reverse current per diode ⁽²⁾
I_F = 5 A
T_A = 25 °C
I_F = 10 A
V_F
I_F = 5 A
T_A = 125 °C
I_F = 10 A
T_A = 25 °C
V_R = 160 V
T_A = 125 °C
I_R
T_A = 25 °C
V_R = 200 V
T_A = 125 °C
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
TYP.
0.75
0.81
0.59
0.68
0.4
0.8
-
1.6
MAX.
-
0.90
-
0.76
-
-
150
10
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20202C VF20202C VB20202C VI20202C
per diode
R_JC
2.2
4.5
2.2
Typical thermal resistance
per device
R_JC
1.3
3.2
1.3
per device R_JA ⁽¹⁾⁽²⁾
52
60
52
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20202C-M3/4W
1.88
ITO-220AB
VF20202C-M3/4W
1.75
TO-263AB
VB20202C-M3/4W
1.37
TO-263AB
VB20202C-M3/8W
1.37
TO-262AA
VI20202C-M3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 31-Oct-14
2
Document Number: 87797
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000