V20200G Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V20200G, VF20200G, VB20200G & VI20200G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode ⁽¹⁾
I_R = 1.0 mA
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current per diode ⁽²⁾
V_R = 180 V
V_R = 200 V
T_J = 25 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_BR
200 (minimum)
0.86
1.23
V_F
0.62
0.71
1.9
1.6
I_R
-
2.5
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
MAX.
-
-
1.70
-
0.80
-
-
150
15
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20200G
VF20200G
Typical thermal resistance per diode
R_θJC
3.2
5.5
VB20200G
3.2
VI20200G
3.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20200G-E3/4W
1.88
ITO-220AB
VF20200G-E3/4W
1.75
TO-263AB
VB20200G-E3/4W
1.39
TO-263AB
VB20200G-E3/8W
1.39
TO-262AA
VI20200G-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
V(B,I)20200G
15
VF20200G
10
5
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
9
D = 0.5 ^{D = 0.8}
8
D = 0.3
D = 0.2
7
6
D = 0.1
D = 1.0
5
4
3
T
2
1
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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2
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Document Number: 89117
Revision: 24-Jun-09