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V20150S Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
New Product
V20150S, VF20150S, VB20150S & VI20150S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
150 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
IF = 5 A
VF
IF = 10 A
TA = 125 °C
IF = 20 A
0.69
0.84
1.15
0.55
0.64
0.75
Reverse current (2)
VR = 100 V
TA = 25 °C
TA = 125 °C
2
2.5
IR
VR = 150 V
TA = 25 °C
TA = 125 °C
-
5
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
-
1.43
-
-
0.82
-
-
250
25
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150S
VF20150S
Typical thermal resistance
RθJC
2.0
4.0
VB20150S
2.0
VI20150S
2.0
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20150S-E3/4W
1.88
ITO-220AB
VF20150S-E3/4W
1.75
TO-263AB
VB20150S-E3/4W
1.39
TO-263AB
VB20150S-E3/8W
1.39
TO-262AA
VI20150S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
V(B,I)20150S
15
VF20150S
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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2
For technical questions within your region, please contact one of the following: Document Number: 89059
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 19-May-08