V20150S-E3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Breakdown voltage
Instantaneous forward voltage ⁽¹⁾
Reverse current ⁽²⁾
I_R = 1.0 mA T_A = 25 °C
V_BR
I_F = 5 A
I_F = 10 A
T_A = 25 °C
I_F = 20 A
I_F = 5 A
V_F
I_F = 10 A
T_A = 125 °C
I_F = 20 A
V_R = 100 V
V_R = 150 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
I_R
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width £ 40 ms}
TYP
150 (min.)
0.69
0.84
1.15
0.55
0.64
0.75
2
2.5
-
5
MAX
-
-
-
1.43
-
-
0.82
-
-
250
25
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150S
VF20150S
Typical thermal resistance
R_JC
2.0
4.0
VB20150S
2.0
VI20150S
2.0
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20150S-E3/4W
1.88
ITO-220AB
VF20150S-E3/4W
1.75
TO-263AB
VB20150S-E3/4W
1.39
TO-263AB
VB20150S-E3/8W
1.39
TO-262AA
VI20150S-E3/4W
1.45

RATINGS AND CHARACTERISTICS CURVES 
(T_A = 25 °C unless otherwise noted)
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
25
Resistive or Inductive Load
20
V(B,I)20150S
15
VF20150S
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 13-Aug-13
2
Document Number: 89059
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