V20150C_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V20150C, VI20150C
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current per diode
V_R = 100 V
V_R = 150 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.79
1.05
0.59
0.69
1.3
1.2
-
3
MAX.
-
1.20
-
0.75
-
-
150
15
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_θJC
V20150C
VI20150C
2.8
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20150C-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VI20150C-M3/4W
V20150CHM3/4W ⁽¹⁾
VI20150CHM3/4W ⁽¹⁾
1.45
1.88
1.45
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
D = 0.5 D = 0.8
8
D = 0.3
D = 0.2
6
D = 0.1
4
D = 1.0
T
2
D = t_p/T t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 89151
[e-mail], [e-mail], [e-mail]
Revision:23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000