V20150C-E3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Trench MOS Schottky technology

V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage 
per diode ⁽¹⁾
Reverse current per diode ⁽²⁾
I_R = 1.0 mA
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
V_R = 100 V
V_R = 150 V
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
150 (minimum)
0.79
1.05
V_F
0.59
0.69
1.3
1.2
I_R
-
3
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
1.20
-
0.75
-
-
150
15
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150C
VF20150C
Typical thermal resistance per diode
R_JC
2.8
5.0
VB20150C
2.8
VI20150C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20150C-E3/4W
1.88
ITO-220AB
VF20150C-E3/4W
1.75
TO-263AB
VB20150C-E3/4W
1.39
TO-263AB
VB20150C-E3/8W
1.39
TO-262AA
VI20150C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
VF20150C
V(B,I)20150C
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8
D = 0.3
D = 0.2
6
D = 0.1
4
D = 1.0
T
2
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 13-Dec-16
2
Document Number: 89046
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