V20120SG_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

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V20120SG, VI20120SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
I_F = 5 A
I_F = 10 A
I_F = 20 A
I_F = 5 A
I_F = 10 A
I_F = 20 A
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.62
0.81
1.20
0.54
0.65
0.78
10
7
-
12
MAX.
-
-
1.33
-
-
0.88
-
-
250
25
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20120SG
VI20120SG
Typical thermal resistance
R_JC
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20120SG-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VI20120SG-M3/4W
V20120SGHM3/4W ⁽¹⁾
VI20120SGHM3/4W ⁽¹⁾
1.45
1.88
1.45
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
Revision: 25-Oct-13
2
Document Number: 89244
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