V20120S Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
I_R = 1.0 mA T_A = 25 °C
V_BR
120 (minimum)
Instantaneous forward voltage ⁽¹⁾
I_F = 5 A
I_F = 10 A
T_A = 25 °C
I_F = 20 A
V_F
I_F = 5 A
I_F = 10 A
T_A = 125 °C
I_F = 20 A
0.57
0.71
0.99
0.50
0.61
0.73
Reverse current ⁽²⁾
V_R = 90 V
T_A = 25 °C
T_A = 125 °C
10
6
I_R
V_R = 120 V
T_A = 25 °C
T_A = 125 °C
-
14
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20120S
VF20120S
Typical thermal resistance
R_θJC
2
4
VB20120S
2
MAX.
-
-
-
1.12
-
-
0.81
-
-
300
30
VI20120S
2
UNIT
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20120S-E3/4W
1.88
ITO-220AB
VF20120S-E3/4W
1.75
TO-263AB
VB20120S-E3/4W
1.38
TO-263AB
VB20120S-E3/8W
1.38
TO-262AA
VI20120S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
VF20120S
V(B,I)20120S
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
D = 0.5 ^{D = 0.8}
18
D = 0.3
16
14
D = 0.2
12
D = 0.1
10
D = 1.0
8
T
6
4
2
D = t_p/T
t_p
0
0
5
10
15
20
25
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 88993
[e-mail], [e-mail], [e-mail]
Revision: 19-May-08