V20120C_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com
V20120C, VI20120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current per diode
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.62
0.81
0.54
0.64
8
6
-
14
MAX.
-
0.90
-
0.72
-
-
700
45
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_JC
V20120C
VI20120C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20120C-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VI20120C-M3/4W
V20120CHM3/4W ⁽¹⁾
VI20120CHM3/4W ⁽¹⁾
1.45
1.88
1.45
Note
(1) _{AEC-Q101 qualifiedï€} 


RATINGS AND CHARACTERISTICS CURVES 
(T_A = 25 °C unless otherwise noted)
PACKAGE CODE
4W
4W
4W
4W

BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
25
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8
D = 0.3
6
D = 0.2
4 ^{D = 0.1}
D = 1.0
T
2
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 16-Aug-13
2
Document Number: 89159
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000