V20120C_12 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
I_R = 1.0 mA T_A = 25 °C
V_BR
120 (minimum)
I_F = 5 A
Instantaneous forward voltage per diode ^{(1) IF = 10 A}
T_A = 25 °C
V_F
I_F = 5 A
I_F = 10 A
T_A = 125 °C
0.62
0.81
0.54
0.64
Reverse current per diode ⁽²⁾
V_R = 90 V
T_A = 25 °C
T_A = 125 °C
8
6
V_R = 120 V
T_A = 25 °C
T_A = 125 °C
I_R
-
14
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
MAX.
-
-
0.90
-
0.72
-
-
700
45
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20120C
VF20120C
Typical thermal resistance per diode
R_θJC
2.8
5.0
VB20120C
2.8
VI20120C
2.8
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20120C-E3/4W
1.88
ITO-220AB
VF20120C-E3/4W
1.75
TO-263AB
VB20120C-E3/4W
1.37
TO-263AB
VB20120C-E3/8W
1.37
TO-262AA
VI20120C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
V(B,I)20120C
15
VF20120C
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8
D = 0.3
6
D = 0.2
4 ^{D = 0.1}
D = 1.0
T
2
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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Document Number: 89040
Revision: 24-Jun-09