V20100S_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

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V20100S, VI20100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
I_F = 5 A
0.51
I_F = 10 A T_A = 25 °C
0.60
Maximum instantaneous forward voltage
I_F = 20 A
I_F = 5 A
I_F = 10 A
T_A = 125 °C
V_F ⁽¹⁾
0.79
0.45
0.53
I_F = 20 A
0.69
Reverse current
T_A = 25 °C
17
V_R = 70 V
T_A = 125 °C
I_R ⁽²⁾
7
T_A = 25 °C
70
V_R = 100 V
T_A = 125 °C
14
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
0.90
-
-
0.76
-
-
500
30
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V20100S
Typical thermal resistance
R_JC
2.0
VI20100S
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100S-M3/4W
1.88
TO-262AA
V120100S-M3/4W
1.45
TO-220AB
V20100SHM3/4W ⁽¹⁾
1.88
TO-262AA
V120100SHM3/4W ⁽¹⁾
1.45
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
Revision: 26-Mar-14
2
Document Number: 89190
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