English
Language : 

V20100S_12 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier
New Product
V20100S, VF20100S, VB20100S & VI20100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage (1)
Reverse current (2)
IR = 10 mA TA = 25 °C
VBR
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
IF = 5 A
VF
IF = 10 A
TA = 125 °C
IF = 20 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
105 (minimum)
0.51
0.60
0.79
0.45
0.53
0.69
17
7
70
14
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100S
VF20100S
Typical thermal resistance
RθJC
2.0
4.0
VB20100S
2.0
MAX.
-
-
-
0.90
-
-
0.76
-
-
500
30
VI20100S
2.0
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100S-E3/4W
1.88
ITO-220AB
VF20100S-E3/4W
1.75
TO-263AB
VB20100S-E3/4W
1.37
TO-263AB
VB20100S-E3/8W
1.37
TO-262AA
VI20100S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
16
VF20100S
12
VB20100S
V20100S
VI20100S
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.5 D = 0.8
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
4
8
12
16
20
24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88975
Revision: 24-Jun-09