V20100R Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

V20100R & VF20100R
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
I_R = 1.0 mA
T_A = 25 °C
V_BR
100 (minimum)
I_F = 5 A
Instantaneous forward voltage per diode ^{(1) IF = 10 A}
T_A = 25 °C
V_F
I_F = 5 A
I_F = 10 A
T_A = 125 °C
0.62
0.81
0.54
0.65
Reverse current per diode ⁽²⁾
V_R = 70 V
T_A = 25 °C
T_A = 125 °C
4
4
V_R = 100 V
T_A = 25 °C
T_A = 125 °C
I_R
-
5.6
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
0.90
-
0.72
-
-
150
15
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100R
Typical thermal resistance per diode
R_θJC
2.8
VF20100R
5.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100R-E3/4W
1.88
ITO-220AB
VF20100R-E3/4W
1.75
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
VF20100R
15
V20100R
10
5
Mounted on specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8
D = 0.3
6
D = 0.2
4
D = 0.1
D = 1.0
T
2
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 89062
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Revision: 19-May-08