V20100C_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V20100C, VI20100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current per diode
V_R = 70 V
V_R = 100 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.55
0.65
0.50
0.58
17
5.3
-
12
MAX.
-
0.79
-
0.68
-
-
800
25
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_JC
V20100C
VI20100C
2.8
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20100C-M3/4W
1.881
TO-262AA
TO-220AB
TO-262AA
VI20100C-M3/4W
V20100CHM3/4W ⁽¹⁾
VI20100CHM3/4W ⁽¹⁾
1.45
1.881
1.45
Note
(1) _{AEC-Q101 qualifiedï€} 

RATINGS AND CHARACTERISTICS CURVES 
(T_A = 25 °C unless otherwise noted)
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
24
Resistive or Inductive Load
20
16
12
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
4
8
12
16
20
24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 16-Aug-13
2
Document Number: 89161
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