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V15PN50-M3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier
www.vishay.com
V15PN50-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
IF = 5.0 A
IF = 7.5 A
IF = 15 A
IF = 5.0 A
IF = 7.5 A
IF = 15 A
VR = 50 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.38
0.41
0.48
0.26
0.31
0.41
140
60
MAX.
-
-
0.56
-
-
0.50
3000
140
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V15PN50
Typical thermal resistance
RJA (1) (2)
70
RJM (3)
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(3) Mounted on 30 mm x 30 mm 2 oz. pad PCB; thermal resistance RJM - junction to mount measured at cathode side
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V15PN50-M3/86A
0.10
86A
V15PN50-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
16
TM = 120 °C, RthJM = 4 °C/W
14
12
10
8
TA = 25 °C, RthJA = 70 °C/W
6
4
2
TM measured at cathode side
0
0
25
50
75 100
125 150
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
9
D = 0.8
8
D = 0.5
D = 0.3
7
D = 0.2
6
D = 0.1
D = 1.0
5
4
3
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 04-Dec-13
2
Document Number: 89966
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