V15P45S-M3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers

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V15P45S-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
I_F = 5.0 A
I_F = 7.5 A
I_F = 15 A
I_F = 5.0 A
I_F = 7.5 A
I_F = 15 A
V_R = 45 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.40
0.45
0.49
0.31
0.34
0.42
-
15
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
0.58
-
-
0.51
1500
50
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
R_JA ⁽¹⁾
R_JM ⁽²⁾
V15P45S
75
4
Notes
(1) _{Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient}
(2) _{Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V15P45S-M3/86A
0.10
86A
V15P45S-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
18
16
T_M = 116 °C ⁽¹⁾
14
12
10
8
6
T_A = 25 °C ⁽²⁾
4
2 ^TL ^Measured
at the Cathode Band Terminal
0
0
25
50
75 100 125 150
T_M - Mount Temperature (°C)
Fig. 1 - Forward Current Derating Curve
11
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.5 ^{D = 0.8}
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Notes
(1) _{Mounted on 30 mm x 30 mm aluminum PCB; TM measured}
at the terminal of cathode band (R_JM = 4 °C/W)
(2) _{Free air, mounted on recommended copper pad area}
(R_JA = 75 °C/W)
Revision: 28-Nov-13
2
Document Number: 89343
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