V12P12_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V12P12
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
I_R = 1.0 mA
I_F = 6 A
I_F = 12 A
I_F = 6 A
I_F = 12 A
Reverse current
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
120 (minimum)
0.57
0.72
0.51
0.63
13
7
50
16
MAX.
-
-
0.80
-
0.70
-
-
500
50
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
R_JA ⁽¹⁾
R_JL
Note
(1) _{Units mounted on recommended PCB 1 oz. pad layout}
V12P12
60
4
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V12P12-M3/86A
0.10
86A
V12P12-M3/87A
0.10
87A
V12P12HM3/86A ⁽¹⁾
0.10
86A
V12P12HM3/87A ⁽¹⁾
0.10
87A
Note
(1) _{Automotive grade}
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89094
[e-mail], [e-mail], [e-mail]
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000