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V12P10_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
IR = 1.0 mA
IF = 5 A
IF = 12 A
IF = 5 A
IF = 12 A
Reverse current
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
100 (minimum)
0.50
0.65
0.43
0.58
7.0
4.4
21.3
11.8
MAX.
-
-
0.70
-
0.64
-
-
250
20
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Typical thermal resistance
RJA (1)
RJL
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
V12P10
60
3
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V12P10-M3/86A
0.10
V12P10-M3/87A
V12P10HM3/86A (1)
V12P10HM3/87A (1)
0.10
0.10
0.10
Note
(1) Automotive grade
PACKAGE CODE
86A
87A
86A
87A
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88981
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000