V12P10HM386A Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V12P10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
I_R = 1.0 mA
I_F = 5 A
I_F = 12 A
I_F = 5 A
I_F = 12 A
Reverse current
V_R = 70 V
V_R = 100 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
100 (minimum)
0.50
0.65
0.43
0.58
7.0
4.4
21.3
11.8
MAX.
-
-
0.70
-
0.64
-
-
250
20
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Typical thermal resistance
R_JA ⁽¹⁾
R_JL
Note
(1) _{Units mounted on recommended PCB 1 oz. pad layout}
V12P10
60
3
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V12P10-M3/86A
0.10
V12P10-M3/87A
V12P10HM3/86A ⁽¹⁾
V12P10HM3/87A ⁽¹⁾
0.10
0.10
0.10
Note
(1) _{Automotive grade}
PACKAGE CODE
86A
87A
86A
87A
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 26-Sep-11
2
Document Number: 88981
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